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From:Journal of Applied Physics (Vol. 117, Issue 6) Peer-ReviewedAbstract Only
From:Journal of Applied Physics (Vol. 121, Issue 5) Peer-ReviewedAbstract Only
From:Journal of Applied Physics (Vol. 122, Issue 4) Peer-ReviewedAbstract Only
From:Bulletin of Materials Science (Vol. 34, Issue 6) Peer-ReviewedAbstract Only
From:Advances in Materials Science and EngineeringPeer-ReviewedA thickness-dependent interfacial distribution of oxide charges for thin metal oxide semiconductor (MOS) structures using high-k materials Zr[O.sub.2] and Hf[O.sub.2] has been methodically investigated. The interface...
From:Canadian Journal of Physics (Vol. 94, Issue 3) Peer-ReviewedAn ab initio calculation of the structural, elastic, and electronic properties of indium arsenide (InAs) under induced pressure is investigated using density functional theory with modified Becke-Johnson potential...
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