Design of nanoscale memristive arrays for memory applications

Citation metadata

Authors: K.G. Dharani and S. Bhavani
Date: June 15, 2016
From: Advances in Natural and Applied Sciences(Vol. 10, Issue 9 SE)
Publisher: American-Eurasian Network for Scientific Information
Document Type: Article
Length: 1,227 words

Main content

Abstract :

A Memristor, memory resistor is a two-terminal nanodevice that has become of tremendous interest for its potential to revolutionize electronics and memory applications. The amount of memory required in a particular system depends on the type of application, but, in general, the number of transistors utilized for the information (data) storage function is much larger than the number of transistors used in logic operations and for other purposes. The ever-increasing demand for larger data storage capacity has driven the fabrication technology and memory development towards more compact design rules and, consequently, toward higher data storage densities. The trend towards higher memory density and larger storage capacity will continue to push the leading edge of digital system design. A major challenge in realization of such systems is the complexities structure of scaling MOS transistors. Memories based on hysteretis resistive materials are expected to have superior properties such as nonvolatile low power consumption are considered very attractive for future ultimately scaled memories.This paper provides a new method to implement memories using memristor arrays. KEYWORDS: memristor, 8X8 array, 16X16 array, memory, LTSpice

Source Citation

Source Citation
Dharani, K.G., and S. Bhavani. "Design of nanoscale memristive arrays for memory applications." Advances in Natural and Applied Sciences, vol. 10, no. 9 SE, 2016, p. 328+. Accessed 16 Jan. 2021.

Gale Document Number: GALE|A466051317