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Academic Journals
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From:Solid State Technology (Vol. 46, Issue 1) Peer-ReviewedPieter "Pete" Burggraaf A group of engineers from Toshiba Corp. and Sony Corp. (Yokohama, Japan) has revealed "first-reported" 65nm CMOS technology. They developed this technology for high-performance system on a...
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From:Advances in Natural and Applied Sciences (Vol. 10, Issue 4) Peer-ReviewedThe paper deals with design of voltage reference circuit. The main part of the voltage reference circuit is to design of bulk driven and current trimming based sub threshold voltage reference circuit. This circuit is...
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From:Solid State Technology (Vol. 49, Issue 9) Peer-ReviewedIt has become increasingly difficult to scale CMOS transistors, yet still maintain high drive currents and simultaneously reduce supply voltage ([V.sub.dd]). This is because threshold voltage and gate oxide thickness...
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From:Solid State Technology (Vol. 50, Issue 11) Peer-ReviewedCMOS circuits using silicon channels are hitting the performance wall, and doping with germanium and straining the lattice have already been used to push the limits. Thus, compound semiconductors are again under...
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From:EE-Evaluation Engineering (Vol. 55, Issue 3) Peer-ReviewedResearch organizations CEA-Leti and imec recently have reported significant semiconductor-technology innovations with respect to silicon (Si) as well as materials beyond silicon. The reports aligned with last year's...
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From:Advances in Materials Science and Engineering (Vol. 2017) Peer-Reviewed
Electrical Characterization of Postmetal Annealed Ultrathin TiN Gate Electrodes in Si MOS Capacitors
Focusing on sub-10nm Silicon CMOS device fabrication technology, we have incorporated ultrathin TiN metal gate electrode in Hafnium Silicate (HfSiO) based metal-oxide capacitors (MOSCAP) with carefully chosen Atomic... -
From:Solid State Technology (Vol. 48, Issue 9) Peer-ReviewedOVERVIEW Processing challenges have made it difficult to put flash memory on the same chip with CMOS logic. Using microFlash technology with some modified process steps enabled this integration to be implemented on...
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From:Progress In Electromagnetics Research Letters (Vol. 38) Peer-ReviewedA low phase noise CMOS complementary cross-coupled LC-tank voltage-controlled oscillator (VCO), implemented with TSMC 0.18 [micro]m 1P6M CMOS technology, is presented. Double pair pseudo-resistance transistors biased by...
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From:Solid State Technology (Vol. 52, Issue 7) Peer-ReviewedPlasmonic technology, today still in an experimental stage, has the potential to be used in future applications such as nanoscale optical interconnects for high-performance computer chips, extremely sensitive (bio)...
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From:Progress In Electromagnetics Research Letters (Vol. 103) Peer-ReviewedImplementation of a broadband Ruthroff-type transmission line transformer balun with a 1 : 2 step-up impedance transformation ratio is presented in this letter. The proposed Transmission Line Transformer (TLT) balun was...
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From:Progress In Electromagnetics Research (Vol. 129) Peer-ReviewedThis paper presents a low voltage wideband down-conversion mixer using current-mode approach for multi-standard receivers. The proposed mixer uses a current mirror amplifier with an embedded passive switching core to...
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From:IETE Journal of Research (Vol. 59, Issue 3) Peer-ReviewedByline: Joon. Chuah, David. Holburn In this paper, a low-noise transimpedance amplifier for pixelated CMOS photon detector for the use in the scanning electron microscope is presented. From simulation, this optimized...
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From:Journal of SensorsPeer-ReviewedDiabetes is currently screened invasively by measuring glucose concentration in blood, which is inconvenient. This paper reports a study on modeling and simulation of a CMOS-MEMS sensor for noninvasive screening of...
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From:Journal of Sensors and Sensor Systems (Vol. 7, Issue 1) Peer-ReviewedByline: Beate Oswald-Tranta To access, purchase, authenticate, or subscribe to the full-text of this article, please visit this link:...
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From:Science - Future of Lithuania (Vol. 6, Issue 2) Peer-ReviewedImage processing is inescapable and long process required for image recognition. To implement it in an embedded system with limited resources, process optimizations should be made. This paper presents an algorithm for...
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From:Science - Future of Lithuania (Vol. 6, Issue 2) Peer-ReviewedThe comparator can be described as one of the basic building blocks in electronics. It is implemented both as a discrete device and as a constituent of a complex circuit. In both cases, the circuits usually operate in...
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From:Progress In Electromagnetics Research C (Vol. 25) Peer-ReviewedA novel 12 GHz VCO designed and fabricated in a 0.18 [micro]m SiGe BiCMOS technology is presented. Strongly magnetic coupled dual LC tanks with fixed and tunable capacitive elements are introduced to extend tuning range...
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From:Journal of NanomaterialsPeer-ReviewedThe scaling process of the conventional 2D-planar metal-oxide semiconductor field-effect transistor (MOSFET) is now approaching its limit as technology has reached below 20 nm process technology. A new nonplanar device...
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From:Journal of SensorsPeer-ReviewedWe analyzed and organized the reasons why the amorphous wire CMOS IC magneto-impedance sensor (MI sensor) has rapidly been mass-produced as the electronic compass chips for the smart phones, mobile phones, and the wrist...
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From:Journal of NanomaterialsPeer-ReviewedStructural color filters, which obtain color selection by varying structures, have attracted extensive research interest in recent years due to the advantages of compactness, stability, multifunctions, and so on. In...