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From:Solid State Technology (Vol. 39, Issue 6) Peer-ReviewedManny Sieradzki and Nick White, the principals of Diamond Semiconductor Group, Gloucester, MA, found themselves in a difficult position in 1991. Building on their decades of experience in the ion implant world, they had...
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From:Advanced Coatings & Surface Technology (Vol. 16, Issue 12) Peer-ReviewedDue to its flexibility in simultaneously and effectively treating large numbers of irregular and complex shaped three-dimensional (3D) structures, plasma-based ion implantation deposition (PBIID) has certain advantages....
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From:Solid State Technology (Vol. 40, Issue 6) Peer-ReviewedIon implantation is critical for semiconductor manufacturing. Present generation high-current implanters are capable of delivering [greater than]20 mA to the wafer, with significant positive space charge. Beam...
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From:Solid State Technology (Vol. 44, Issue 6) Peer-ReviewedThe Gemini low-voltage room ionization system offers high levels of performance and control through individually addressable ceiling emitter modules. Ion output and balance can be easily adjusted using either the system...
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From:Solid State Technology (Vol. 49, Issue 3) Peer-ReviewedThe Optima HD ion implanter addresses traditional high-dose implants as well as the expanding range of applications in sub-65nm generation device manufacturing. The low-energy, high-dose system offers a wide energy...
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From:Solid State Technology (Vol. 52, Issue 3) Peer-ReviewedOver the years, suppliers of ion implant tools have competed mostly on productivity and cost of ownership differentiation. The challenges associated with the migration to 32nm and 22nm have opened up new opportunities...
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From:Advanced Coatings & Surface Technology (Vol. 16, Issue 5) Peer-ReviewedFrom grocery bags to spacecraft components, polymers are ubiquitous. Polymers find widespread application because of their superior physical and chemical properties as well as their relatively lower cost. Some polymers...
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From:Solid State Technology (Vol. 39, Issue 6) Peer-ReviewedFor the last decade, Asian IC manufacturers have been concerned by the high wafer cost of epitaxial silicon. At 200 mm, epi wafers double the substrate cost, to $200 from $100. These fabs use design alternatives like...
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From:Solid State Technology (Vol. 44, Issue 6) Peer-ReviewedThe Quantum ion implantation system addresses the productivity and control issues that arise when forming source/drain structures at [less than or equal to]0.13[micro]m geometries. The system employs a beamline that...
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From:Solid State Technology (Vol. 44, Issue 6) Peer-ReviewedThe bright promise for many new materials entering chipmaking is tempered by more realism as research progresses. The latest science coming out of this work drew intense interest -- and some debate -- at the Materials...
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From:Advanced Coatings & Surface Technology (Vol. 16, Issue 12) Peer-ReviewedOver the past two decades, ion implantation technique has been applied widely to metals and polymers in order to enhance wear and corrosion resistance. There are two methods for plasma generation: One is plasma source...
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From:Solid State Technology (Vol. 35, Issue 6) Peer-ReviewedULSI "well engineering" by high energy ion implantation is quite useful in improving device characteristics such as leakage current, soft error immunity, scaled device isolation, etc. Implantation induced secondary...
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From:Advanced Materials & Processes (Vol. 153, Issue 4) Peer-ReviewedAn ion implantation technology known as Implantox has been developed to increase the resistance of polymers and carbon-based materials to oxidation and erosion. The Implantox process, which is based on high-dose ion...
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From:Solid State Technology (Vol. 44, Issue 11) Peer-ReviewedApplied Materials, Santa Clara, CA, began recently to reduce its work force by some 2000 positions, or 10%, to address the downturn in the semiconductor industry. About 700 positions at its Silicon Valley operations,...
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From:Solid State Technology (Vol. 45, Issue 12) Peer-ReviewedHitachi High Technologies has shipped its first SIMOX ion implanter for mass production use to the Mitsubishi-Sumitomo Silicon joint venture, Sumco. Hitachi reports the 300mm SOI tool is also being evaluated by a major...
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From:Solid State Technology (Vol. 35, Issue 11) Peer-ReviewedThere are special implantation process control issues associated with large tilt angles (7|degrees~ to 60|degrees~) and wafer rotational repositioning. These include 1) tilt related nonuniformity, 2) effective dose...
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From:Advanced Materials & Processes (Vol. 147, Issue 5) Peer-ReviewedMetal ion implantation refers to the process of ion bombardment to change surface properties. The low-temperature process is applicable to plastics, aluminum, low-alloy steel and other products. The process does not...
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From:Science (Vol. 275, Issue 5305) Peer-ReviewedA method of preparing modified surfaces, referred to as soft-landing, is described in which intact polyatomic ions are deposited from the gas phase into a monolayer fluorocarbon surface at room temperature. The ions are...
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From:Solid State Technology (Vol. 41, Issue 6) Peer-ReviewedLeading-edge IC, companies will implement four CMOS technology nodes (at 0.25, 0.18, 0.15, and 0.13 [[micro]meter]) in manufacturing lines over the next six years. This will lead to a dramatic increase in the level of...
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From:Solid State Technology (Vol. 34, Issue 10) Peer-ReviewedIon implantation in semiconductors first developed in the USSR, as in western countries, in the 1950s and early 1960s. In 1952, at the Leningrad Physic-Technical Institute, M.M. Bredov observed a change of conductance...