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    Academic Journals

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• 2-D Analytical Drain Current Model of Double-Gate Heterojunction TFETs With a Si(O.sub.2)/Hf(O.sub.2) Stacked Gate-Oxide Structure

  Authors:Satyabrata Jit, Balraj Singh, Kamalaksha Baral, Prince Kumar Singh, Ekta Goel, Sweta Chander, et al.From:IEEE Transactions on Electron Devices (Vol. 65, Issue 1) Peer-Reviewed

  Jan. 2018 Technical report

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• Analysis on the Operation of Negative Differential Resistance FinFET With Pb{(Zr.sub.0.52)(Ti.sub.0.48)(O.sub.3)} Threshold Selector

  Authors:Jaemin Shin, Changhwan Shin, and Eunah KoFrom:IEEE Transactions on Electron Devices (Vol. 65, Issue 1) Peer-Reviewed

  Jan. 2018 Technical report

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• Demonstration of Constant 8 W/mm Power Density at 10, 30, and 94 GHz in State-of-the-Art Millimeter-Wave N-Polar GaN MISHEMTs

  Authors:Umesh K. Mishra, Stacia Keller, Elaheh Ahmadi, Matthew Guidry, Steven Wienecke, Brian Romanczyk, et al.From:IEEE Transactions on Electron Devices (Vol. 65, Issue 1) Peer-Reviewed

  Jan. 2018 Technical report

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• Drain Current Saturation in Line Tunneling-Based TFETs: An Analog Design Perspective

  Authors:Bulusu Anand, Sudeb Dasgupta, Abhishek B. Solanki, and Abhishek AcharyaFrom:IEEE Transactions on Electron Devices (Vol. 65, Issue 1) Peer-Reviewed

  Jan. 2018 Technical report

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• A Charge-Based Capacitance Model for Double-Gate Tunnel FETs With Closed-Form Solution

  Authors:Chen Liu, Hongliang Lu, Bin Lu, Yuming Zhang, Yimen Zhang, Xiaoran Cui, et al.From:IEEE Transactions on Electron Devices (Vol. 65, Issue 1) Peer-Reviewed

  Jan. 2018 Technical report

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• New Structural Design of Gated Lateral Bipolar Junction Transistor for Sensor Applications

  Authors:Shin-Won Kang, Hyun-Min Jeong, Jin-Beom Kwon, Hyurk-Choon Kwon, Ju-Seong Kim, Binrui Xu, et al.From:IEEE Transactions on Electron Devices (Vol. 65, Issue 1) Peer-Reviewed

  Jan. 2018 Technical report

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• Enhancement of Luminous Efficiency and Uniformity of CCT for Quantum Dot-Converted LEDs by Incorporating With ZnO Nanoparticles

  Authors:Long-Shi Rao, Yong Tang, Zhi Li, Zong-Tao Li, Jia-Sheng Li, and Shu-Dong YuFrom:IEEE Transactions on Electron Devices (Vol. 65, Issue 1) Peer-Reviewed

  Jan. 2018 Technical report

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• Electronic Conduction Mechanisms in Insulators

  Authors:John F. Wager and Tsung-Han ChiangFrom:IEEE Transactions on Electron Devices (Vol. 65, Issue 1) Peer-Reviewed

  Jan. 2018 Technical report

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• A Physical Model for Metal-Oxide Thin-Film Transistor Under Gate-Bias and Illumination Stress

  Authors:Man Wong, Jiapeng Li, Lei Lu, Rongsheng Chen, and Hoi-Sing KwokFrom:IEEE Transactions on Electron Devices (Vol. 65, Issue 1) Peer-Reviewed

  Jan. 2018 Technical report

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• Improved Cavity for Broadband Frequency-Tunable Gyrotron

  Authors:Viktor I. Tkachenko, Tetiana I. Tkachova, and Vitalii I. ShcherbininFrom:IEEE Transactions on Electron Devices (Vol. 65, Issue 1) Peer-Reviewed

  Jan. 2018 Technical report

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• Electron Field Emission Enhancement Based on Al-Doped ZnO Nanorod Arrays With UV Exposure

  Authors:Yan-Kuin Su, Yu-Ming Peng, Hsin-Ting Yeh, Hsin-Chieh Yu, Chih-Chiang Yang, and Zi-Hao WangFrom:IEEE Transactions on Electron Devices (Vol. 65, Issue 1) Peer-Reviewed

  Jan. 2018 Technical report

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• Empirical Model for Nonuniformly Doped Symmetric Double-Gate Junctionless Transistor

  Authors:Mridula Gupta, Manoj Saxena, Ayush Kumar, and Vandana KumariFrom:IEEE Transactions on Electron Devices (Vol. 65, Issue 1) Peer-Reviewed

  Jan. 2018 Technical report

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• The Effects of (N.sub.2)O Plasma Treatment on the Device Performance of Solution-Processed a-InMgZnO Thin-Film Transistors

  Authors:Wei Xue, Jianshe Xue, Wei Yan, Jian Guo, Xuyang Li, Zhinong Yu, et al.From:IEEE Transactions on Electron Devices (Vol. 65, Issue 1) Peer-Reviewed

  Jan. 2018 Technical report

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• Design of GaN-Based Multicolor Tunnel-Junction Light-Emitting Diodes

  Authors:Jinn-Kong Sheu, Ming-Lun Lee, Man-Fang Huang, Fang-Ming Chen, Yen-Kuang Kuo, Jih-Yuan Chang, et al.From:IEEE Transactions on Electron Devices (Vol. 65, Issue 1) Peer-Reviewed

  Jan. 2018 Technical report

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• PBTI in GaN-HEMTs With p-Type Gate: Role of the Aluminum Content on Delta(V.sub.mathrmTH) and Underlying Degradation Mechanisms

  Authors:Claudio Fiegna, Enrico Sangiorgi, Stefaan Decoutere, Denis Marcon, Paolo Magnone, Niels Posthuma, et al.From:IEEE Transactions on Electron Devices (Vol. 65, Issue 1) Peer-Reviewed

  Jan. 2018 Technical report

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• High-Performance Double-Gate alpha -InGaZnO ISFET pH Sensor Using a HfO2 Gate Dielectric

  Authors:Tung-Ming Pan, Tuo-Hung Hou, and Chih-Hung LuFrom:IEEE Transactions on Electron Devices (Vol. 65, Issue 1) Peer-Reviewed

  Jan. 2018 Technical report

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• Transparent Ru-Si-O/In-Ga-Zn-O MESFETs on Flexible Polymer Substrates

  Authors:Eliana Kami?ska, Krystyna Stiller, Krzysztof Piskorski, Marcin My?liwiec, Micha? A. Borysiewicz, Andrzej Taube, et al.From:IEEE Transactions on Electron Devices (Vol. 65, Issue 1) Peer-Reviewed

  Jan. 2018 Technical report

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• 3-D Floating-Gate Synapse Array With Spike-Time-Dependent Plasticity

  Authors:Yoon Kim, Byung-Gook Park, Kyung-Chang Ryoo, Sungjun Kim, Hyungjin Kim, Dae-Hoon Wee, et al.From:IEEE Transactions on Electron Devices (Vol. 65, Issue 1) Peer-Reviewed

  Jan. 2018 Technical report

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• GaAs Metal-Oxide-Semiconductor Capacitor With Nd-Based High-k Oxynitrides as Gate Dielectric and Passivation Layer

  Authors:P. T. Lai, L. N. Liu, H. W. Choi, J. P. Xu, and W. M. TangFrom:IEEE Transactions on Electron Devices (Vol. 65, Issue 1) Peer-Reviewed

  Jan. 2018 Technical report

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• Resistive Switching Device Technology Based on Silicon Oxide for Improved ON-OFF Ratio--Part I: Memory Devices

  Authors:Daniele Ielmini, Rosana Rodriguez, Marcos Maestro, Mario Laudato, Elia Ambrosi, and Alessandro BricalliFrom:IEEE Transactions on Electron Devices (Vol. 65, Issue 1) Peer-Reviewed

  Jan. 2018 Technical report

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