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    Academic Journals

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• Impact of Doping Concentration on Electronic Properties of Transition Metal-Doped Monolayer Molybdenum Disulfide

  Authors:Yiming Li and Yi-Chia TsaiFrom:IEEE Transactions on Electron Devices (Vol. 65, Issue 2) Peer-Reviewed

  Feb. 2018 Technical report

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• Hybrid Electrothermal Simulation of a 3-D Fin-Shaped Field-Effect Transistor Based on GaN Nanowires

  Authors:Xiaoliang Wang, Qing Hao, Hongbo Zhao, Quan Wang, and Yue XiaoFrom:IEEE Transactions on Electron Devices (Vol. 65, Issue 2) Peer-Reviewed

  Feb. 2018 Technical report

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• A 2.7-M Pixels 64-mW CMOS Image Sensor With Multicolumn-Parallel Noise-Shaping SAR ADCs

  Authors:Seung-Tak Ryu, Minho Kwon, Heewon Kang, Sun-Il Hwang, Jae-Hyun Chung, Hyeon-June Kim, et al.From:IEEE Transactions on Electron Devices (Vol. 65, Issue 2) Peer-Reviewed

  Feb. 2018 Technical report

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• Effect of La Addition on the Electrical Characteristics and Stability of Solution-Processed LaInO Thin-Film Transistors With High- k ZrO2 Gate Insulator

  Authors:Zhi-Lin Zhang, Cheng-Yu Zhao, Jun Li, De-Yao Zhong, Chuan-Xin Huang, Jian-Hua Zhang, et al.From:IEEE Transactions on Electron Devices (Vol. 65, Issue 2) Peer-Reviewed

  Feb. 2018 Technical report

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• Performance Improvement and Sub-60 mV/Decade Swing in AlGaN/GaN FinFETs by Simultaneous Activation of 2DEG and Sidewall MOS Channels

  Authors:Jung-Hee Lee, Yue Xu, Ki-Sik Im, Maryline Bawedin, and Sorin CristoloveanuFrom:IEEE Transactions on Electron Devices (Vol. 65, Issue 2) Peer-Reviewed

  Feb. 2018 Technical report

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• Controllable Thermal-Frequency Tuning of a Terahertz Gyrotron

  Authors:Pu-Kun Liu, Li Luo, Chao-Hai Du, Xiang-Bo Qi, Zheng-Di Li, Shi Pan, et al.From:IEEE Transactions on Electron Devices (Vol. 65, Issue 2) Peer-Reviewed

  Feb. 2018 Technical report

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• Analysis of Electrothermal and Impact-Ionization Effects in Bipolar Cascode Amplifiers

  Authors:Niccolo Rinaldi, Thomas Zimmer, Vincenzo d'Alessandro, Rosario D'Esposito, Andre G. Metzger, Kai H. Kwok, et al.From:IEEE Transactions on Electron Devices (Vol. 65, Issue 2) Peer-Reviewed

  Feb. 2018 Technical report

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• An FET With a Source Tunneling Barrier Showing Suppressed Short-Channel Effects for Low-Power Applications

  Authors:Kuo-Hsing Kao, Darsen D. Lu, Meng-Hsueh Chiang, Chun-Nan Chen, Jyun-Hwei Tsai, Wen-Jay Lee, et al.From:IEEE Transactions on Electron Devices (Vol. 65, Issue 2) Peer-Reviewed

  Feb. 2018 Technical report

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• Effective Doping Concentration Theory: A New Physical Insight for the Double-RESURF Lateral Power Devices on SOI Substrate

  Authors:Jia-Fei Yao, Jun Zhang, Yu-Feng Guo, Ke-Meng Yang, Xiao-Juan Lian, and David Z. PanFrom:IEEE Transactions on Electron Devices (Vol. 65, Issue 2) Peer-Reviewed

  Feb. 2018 Technical report

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• New Version of "PaWaIC" Helix-TWT Particle-Wave Interaction Code Based on Pseudospectral Analytical Time-Domain Technique With Collocated Space and Time-Marching Scheme: "PaWaIC-PSATD-CSaT"

  Authors:Mohammad Sadegh Abrishamian and Amir SetayeshFrom:IEEE Transactions on Electron Devices (Vol. 65, Issue 2) Peer-Reviewed

  Feb. 2018 Technical report

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• Influencing Sources for Dark Current Transport and Avalanche Mechanisms in Planar and Mesa HgCdTe p-i-n Electron-Avalanche Photodiodes

  Authors:Wei Lu, Qing Li, Jiale He, Weida Hu, Lu Chen, and Xiaoshuang ChenFrom:IEEE Transactions on Electron Devices (Vol. 65, Issue 2) Peer-Reviewed

  Feb. 2018 Technical report

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• A 256times256 , 100-kfps, 61 percent Fill-Factor SPAD Image Sensor for Time-Resolved Microscopy Applications

  Authors:Robert K. Henderson, Paul Dalgarno, Istvan Gyongy, Neil Calder, Amy Davies, Neale A. W. Dutton, et al.From:IEEE Transactions on Electron Devices (Vol. 65, Issue 2) Peer-Reviewed

  Feb. 2018 Technical report

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• Nanodiamond Thin Film Field Emitter Cartridge for Miniature High-Gradient Radio Frequency X -Band Electron Injector

  Authors:Sergey V. Baryshev, Chunguang Jing, Anirudha V. Sumant, Sergey Antipov, Richard Konecny, Kiran Kumar Kovi, et al.From:IEEE Transactions on Electron Devices (Vol. 65, Issue 2) Peer-Reviewed

  Feb. 2018 Technical report

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• JFETIDG: A Compact Model for Independent Dual-Gate JFETs With Junction or MOS Gates

  Authors:Colin C. McAndrew and Kejun XiaFrom:IEEE Transactions on Electron Devices (Vol. 65, Issue 2) Peer-Reviewed

  Feb. 2018 Technical report

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• Steep Sub-Boltzmann Switching in AlGaN/GaN Phase-FETs With ALD V(O.sub.2)

  Authors:Debdeep Jena, David J. Meyer, Virginia D. Wheeler, Brian Downey, Amit Verma, Bo Song, et al.From:IEEE Transactions on Electron Devices (Vol. 65, Issue 2) Peer-Reviewed

  Feb. 2018 Technical report

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• Design of Power-Rail ESD Clamp With Dynamic Timing-Voltage Detection Against False Trigger During Fast Power-ON Events

  Authors:Ming-Dou Ker and Jie-Ting ChenFrom:IEEE Transactions on Electron Devices (Vol. 65, Issue 2) Peer-Reviewed

  Feb. 2018 Technical report

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• The Calculation of Negative Bias Illumination Stress-Induced Instability of Amorphous InGaZnO Thin-Film Transistors for Instability-Aware Design

  Authors:Dae Hwan Kim, Dong Myong Kim, Sung-Jin Choi, and Jun Tae JangFrom:IEEE Transactions on Electron Devices (Vol. 65, Issue 2) Peer-Reviewed

  Feb. 2018 Technical report

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• Comparison Between High-Holding-Voltage SCR and Stacked Low-Voltage Devices for ESD Protection in High-Voltage Applications

  Authors:Ming-Dou Ker and Chia-Tsen DaiFrom:IEEE Transactions on Electron Devices (Vol. 65, Issue 2) Peer-Reviewed

  Feb. 2018 Technical report

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• Compact Model for Low Effective Mass Channel Common Double-Gate MOSFET

  Authors:Santanu Mahapatra and Ananda Sankar ChakrabortyFrom:IEEE Transactions on Electron Devices (Vol. 65, Issue 2) Peer-Reviewed

  Feb. 2018 Technical report

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• Analysis and Modeling of Thermal-Electric Coupling Effect of High-Power Monolithically Integrated Light-Emitting Diode

  Authors:Yong Cai, Baoshun Zhang, Yibin Zhang, Mingdi Ding, Desheng Zhao, Hongjuan Huang, et al.From:IEEE Transactions on Electron Devices (Vol. 65, Issue 2) Peer-Reviewed

  Feb. 2018 Technical report

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