Simulated optical absorption enhancement in random silicon nanohole structure for solar cell application

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Date: Nov. 21, 2014
From: Journal of Applied Physics(Vol. 116, Issue 19)
Publisher: American Institute of Physics, Inc.
Document Type: Report
Length: 71 words

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Abstract :

The article describes a systematic simulation study on light absorption in a silicon nanohole structure that has randomness introduced into its structural parameters, which include the hole radius, depth, and position. The result reveal that compared to their periodic counterparts, light absorption is enhanced for the random structures. The highest light absorption is obtained for the structure with randomness in hole position, showing a 12.7% enhancement compared with the periodic structure.

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Gale Document Number: GALE|A409525317