Characterization of copper selenide thin film hole-injection layers deposited at room temperature for use with p-type organic semiconductors

p-Type copper selenide deposited at room temperature is examined as a hole-injection layer for low-temperature organic devices. The results have shown that a [Cu.sub.x]Se film combined with CuPc is a good candidate for a low-voltage hole-injection anode or a buffer layer in low-temperature devices such as organic light-emitting diodes and thin film transistors.