Characterization of copper selenide thin film hole-injection layers deposited at room temperature for use with p-type organic semiconductors

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From: Journal of Applied Physics(Vol. 104, Issue 11)
Publisher: American Institute of Physics, Inc.
Document Type: Technical report
Length: 53 words

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Abstract :

p-Type copper selenide deposited at room temperature is examined as a hole-injection layer for low-temperature organic devices. The results have shown that a [Cu.sub.x]Se film combined with CuPc is a good candidate for a low-voltage hole-injection anode or a buffer layer in low-temperature devices such as organic light-emitting diodes and thin film transistors.

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Gale Document Number: GALE|A198584658