Mechanism for the increase of indium-tin-oxide work function by O2 inductively coupled plasma treatment

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Date: Jan. 15, 2004
From: Journal of Applied Physics(Vol. 95, Issue 2)
Publisher: American Institute of Physics, Inc.
Document Type: Article
Length: 56 words

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Abstract :

The effects of O2 inductively coupled plasma (ICP) treatment on the chemical composition and work function of indium-tin-oxide (ITO) surface are investigated. The enhanced oxidation of the thin Ni overlayer on the O2-ICP-treated sample suggests that preventing the migration of oxygen atoms into the active region of organic light-emitting diodes is important for improving device lifetime.

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Gale Document Number: GALE|A125016061