Optical and microstructural studies of atomically flat ultrathin in-rich InGaN/GaN multiple quantum wells

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From: Journal of Applied Physics(Vol. 103, Issue 6)
Publisher: American Institute of Physics, Inc.
Document Type: Article
Length: 54 words

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Abstract :

A detailed study was conducted to examine the optical and microstructural properties of atomically flat ultrathin In-rich (UTIR) InGaN/GaN multiple quantum well. An efficient photoexcited carrier trapping observed into QWs and an electric field effect-free property that originated from nature of UTIR InGaN QWs, support the potential use of the system for light-emitting applications.

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Gale Document Number: GALE|A179221936