Lateral high-speed bipolar transistors on SOI for RF SoC applications

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From: IEEE Transactions on Electron Devices(Vol. 52, Issue 7)
Publisher: Institute of Electrical and Electronics Engineers, Inc.
Document Type: Article
Length: 40 words

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Abstract :

A novel silicon-on-insulator (SOI) lateral radio-frequency (RF) bipolar transistor is introduced. The fabrication process relies on polysilicon side-wall-spacer (PSWS) to self-align the base contact to the intrinsic base and the self-aligned base and emitter regions greatly reduce the parasitic components.

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Gale Document Number: GALE|A134811832