The effect of carbon and germanium on phase transformation of nickel on Si(sub 1-x-y)Ge(sub x)C(sub y) epitaxial layers

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From: Journal of Applied Physics(Vol. 95, Issue 5)
Publisher: American Institute of Physics, Inc.
Document Type: Article
Length: 40 words

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Abstract :

The phase transformation and sheet resistance of Nickel on single crystalline SiGe(C) layers after annealing treatments at 360-900 degree Celsius is investigated. A large interfacial roughness was obtained in the Ni(SiGe) layers, whereas the Ni(SiGeC) layers demonstrated a smoother surface.

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Gale Document Number: GALE|A123693215