Experimental investigation of the temperature dependence of InAs-A1Sb-GaSb resonant interband tunnel diodes

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Date: July 2004
From: IEEE Transactions on Electron Devices(Vol. 51, Issue 7)
Publisher: Institute of Electrical and Electronics Engineers, Inc.
Document Type: Article
Length: 43 words

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Abstract :

The temperature dependence of the current-voltage (I-V) characteristics of InAs-A1Sb-GaSb resonant interband tunnel diodes (RITDs) are investigated. Comparison of the temperature performance of RITDs with different barrier thicknesses shows that devices with thinner barriers have I-V characteristics that are less sensitive to temperature.

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Gale Document Number: GALE|A122243192