The drain velocity overshoot in an 80 nm metal-oxide-semiconductor field-effect transistor

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From: Journal of Applied Physics(Vol. 105, Issue 7)
Publisher: American Institute of Physics, Inc.
Document Type: Technical report
Length: 61 words

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Abstract :

The current at the onset of saturation in a metal-oxide-semiconductor field-effect transistor (MOSFET) is limited by the drain velocity that has increased toward its saturation value with the increase in the drain voltage. The channel conduction beyond the quasisaturation point is increased due to the drain velocity overshoot as a result of enhanced drain electric field as drain voltage is increased.

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Gale Document Number: GALE|A204384161