Nitrogen incorporation in ultrathin gate dielectrics: A comparison of He/N(sub 2)O and Ne/N(sub 2) remote plasma processes

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Date: Sept. 15, 2001
From: Journal of Applied Physics(Vol. 90, Issue 6)
Publisher: American Institute of Physics, Inc.
Document Type: Article
Length: 60 words

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Abstract :

Ultrathin Si oxynitride films grown by low-temperature remote plasma processing were examined by on-line Auger electron spectroscopy and angle-resolved x-ray photoelectron spectroscopy to determine the concentration, spatial distribution, and chemical bonding of nitrogen. Although both processes were found to incorporate nitrogen near the Si-SiO(sub 2) interface in a N-Si(sub 3) bonding configuration, the nitrogen areal densities and spatial distributions differed.

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Gale Document Number: GALE|A128588635