Ultrathin silicon oxynitride films grown by Ar/N2O remote plasma processing

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Date: June 15, 1998
From: Journal of Applied Physics(Vol. 83, Issue 12)
Publisher: American Institute of Physics, Inc.
Document Type: Article
Length: 62 words

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Abstract :

Research was conducted to examine the ultrathin silicon oxynitride films grown by Ar/N2O remote plasma processing. The methodologies used included on-line Auger electron spectroscopy, secondary ion mass spectroscopy and angle-resolved x-ray photoelectron spectroscopy. Results indicate that atomic oxygen produced in N2O plasma decomposition scavenges nitrogen from the bulk of the film which confines nitrogen to a very narrow region near the substrate.

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Gale Document Number: GALE|A20884318